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PTW20N50

Features
■ RDS(on) (Max 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 90nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTW9N90

Features
■ RDS(on) (Max 1.4 Ω )@VGS=10V
■ Gate Charge (Typical 47nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTU50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTU7N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N60

600V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=600V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU5N65

650V N-Channel MOSFET

Features
●Low Intrin sic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU2N80

HIGH VOLTAGE N-Channel MOSFET
600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP9540

P-Channel Enhancement Mode Power MOSFET
Description
The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

General Features
● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance

Application
● Portable equipment and battery powered systems

PTP8580

Description
The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

General Features
● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP7190

Description
The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP1579

Description
The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTP1550

Description
The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =50A
RDS(ON) <23mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTF50M06

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 33nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.

PTP8N60

Features
■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
■ Gate charge (Typical 30nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

PTP5N65-E

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.7Ω (Max) @VG=10V
●100% Avalanche Tested

PTP2N80

800V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :Qg= 13nC (Typ.)
●BVDSS=800V,ID=3A
●RDS(on) : 5 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP01H11

Description
The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

General Features
● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTP01H10

Description
The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features

● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTF12N60

Features
■ RDS(on) (Max 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 50nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTF10N65

Features
■ RDS(on) (Typical 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.

PTF10N60

Features
10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
Low gate charge ( typical 48nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability

PTF8N60

Features
■ RDS(on) (Max 1.2 Ω )@VGS=10V
■ Gate Charge(Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTF5N60

Features
■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■Fast switching
■100% AvalancheTested
■Improved dv/dt capability

General Description

This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

PTF3N80

Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge(Typical 15.0nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTD7580

Description
The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V(Typ:6.5mΩ)
● Special process technology for high ESD capability
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTD630

200V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 22 nC (Typ.)
●BVDSS=200V,ID=9A
●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
●100% Avalanche Tested

PTD50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTD30P55

DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTD7N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N60

600V N-Channel MOSFET
Features
● Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Extended Safe Operating Area
● Unrivalled Gate Charge : 16 nC (Typ.)
● BVDSS=600V,ID=6A
● Lower RDS(on) : 1.5Ω (Max) @VG=10V
● 100% Avalanche Tested

PTD5N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD5N50

N-Channel MOSFET
Features
■ RDS(on) (Max 1.5Ω) @ VGS=10V
■ GateCharge(Typical 20nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■MaximumJunctionTemperatureRange(150°C)

PTD2N80

HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTR1N60

N-CHANNEL 600V - 8 W - 1A DPAK / IPAK / TO-92Power MOSFET
●TYPICAL RDS(on) = 8 W
●EXTREMELY HIGH dv/dt CAPABILITY
● 100% AVALANCHE TESTED
●GATE CHARGE MINIMIZED
●NEW HIGH VOLTAGE BENCHMARK

APPLICATIONS
●SWITCH MODE LOW POWER SUPPLIES(SMPS)
●LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
● LOW POWER BATTERY CHARGERS

PT401

凯发集团描述
PT401是一款用于替代反激变换器中副边肖特基二极管的高性能同步整流控制器。
PT401基于“自适应死区时间控制”技术,可支持连续模式(CCM)、断续模式(DCM)和准谐振工作模式(QR)。同时内部集成参考电压为1.25V的误差放大器,可替代外部TL431,降低了系统成本。
PT401集成欠压保护功能与原副边共通保护功能。

主要特点
●反激拓扑副边同步整流控制器
●支持CCM、DCM和准谐振工作模式
●<300uA超低静态电流
●内置1.25V(±1.5%)参考电压和误差放大器,无需TL431
●集成多种保护
  ■VCC欠压保护(UVLO)
  ■原副边共通保护
●封装类型SOT23-6

典型应用
●工业电源系统
●电池供电系统
●反激适配器

PT35XX

概述
PT35XX是一款用于开关电源的高效率同步整流控制IC。其具备较高的集成度,在有效的提升开关电源的转换效率的同时,减少了外围元器件的应用。
PT35XX可用于DCM/QR开关电源系统。该电路内置45V的功率管,在系统中替代次级肖特基管,并提高整个系统的工作效率。具有开启阀值电压低、开关速度快和反向恢复时间短的特点。
PT35XX具有极低的静态工作损耗和自供电技术。电路采用SOP8的标准封装形式。

特点
支持DCM和QR模式
● 内部集成低内阻的N沟道功率MOSFET
●开关转换速度快、反向恢复时间短
●特有的自供电技术,无需外部电源供电
●内置多重保护
●外围应用器件少
● 静态功耗小

特点
●支持DCM和QR模式
● 内部集成低内阻的N沟道功率MOSFET
●开关转换速度快、反向恢复时间短
●特有的自供电技术,无需外部电源供电
● 内置多重保护
●外围应用器件少
●静态功耗小

应用
●电源适配器、电源转换器等
●小型数码凯发集团的辅助电源等

PT5222

概述
PT5222为USB镍镉/镍氢充电管理IC,现在主要应用的市场为电子玩具USB充电器。本芯片为一种高效率、控制稳定可靠的充电管理电路。整个电路通过检测电池电压控制充电电流大小。电路采用-△V快速充电终止方式,保证电池的充饱率达到100%。芯片内置了高精度的 ADC,实时对电池电压和充电电流进行准确采样,并经过智能算法处理,从而高效、可靠的完成充电。

特性
●给镍镉/镍氢电池3、4节电池充电。
●芯片的工作电压为5V,供电范围为3.5V~7.5V。
●芯片设计了内置的10bit ADC可对采样的电池电压和电流进行模数转换,并输出数字信号到算术逻辑单元检测。
●充电截止方式采用-△V检测方式。
●IC内置自动电流调节器,当升压电压升到最大或输入电压被拉低时具
有电流自动调节功能,电流自动调节功能会将电流调至一个最大电流。
●IC内部可以检测USB供电电压大小,当USB电源电压被拉低到某个阈值时会减小充电电流以保护USB电源的安全,USB电源电压升起后再增大充电电流。
●IC具有上电输出短路报警功能,以保证电池、及IC自身安全。
●IC内部具有过温保护功能,当芯片内部温度过高时会关闭输出,温度滞回后继续工作。
●驱动 LED 输出显示充电状态。
●采用ESOP8封装。

PT5121

概述
PT5121为USB镍镉/镍氢充电管理IC,现在主要应用的市场为电子玩
具USB充电器。
本芯片为一种高效率、控制稳定可靠的充电管理电路。整个电路通过检测电
池电压控制充电电流大小。电路具有0△V 和-△V 快速充电终止方式,保证电
池的充饱率达到100%。芯片设计了一种内置的高精度ADC 可对采样的电池电压
和电流进行模数转换,并输出数字信号到算术逻辑单元检测,从而可靠地终止快
速充电。

特性
●给镍镉/镍氢电池1 节-8 节可充电电池充电。
●芯片的工作电压为5V,供电范围为2.6V~7.5V。
●芯片设计了内置的10bit ADC 可对采样的电池电压和电流进行模数转换,并
输出数字信号到算术逻辑单元检测。
● 充电截止方式采用0△V+ -△V 检测方式。
●IC 内置自动电流调节器,当升压电压升到最大或输入电压被拉低时具
有电流自动调节功能,电流自动调节功能会将电流调至一个最大电流。
●IC 内部可以检测USB 供电电压大小,当USB 电源电压被拉低到某个阈值时
会减小充电电流以保护USB 电源的安全,USB 电源电压升起后再增大充电
电流。
●IC 具有上电输出短路报警功能,以保证电池、及IC 自身安全。
●IC 内部具有过温保护功能,当芯片内部温度过高时会关闭输出,温度滞回后
继续工作。
● 驱动LED 输出显示充电状态。
●采用SOP8 封装。

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